Module dopes.data_analysis.semiconductor
Functions
def intrinsic_concentration(temp)
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def intrinsic_concentration(temp): """ Function to calculate the intrinsic concentration of silicon from K. Misiakos and Tsamakis, D., “Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K”, Journal of Applied Physics, vol. 74, no. 5, p. 3293, 1993. args: \n\t- temp (scalar): the temperature return: \n\t- ni (scalar): the intrinsic concentration in silicon """ return 5.29e19 * (temp/300)**2.54 * np.exp(-6726/temp)
Function to calculate the intrinsic concentration of silicon from K. Misiakos and Tsamakis, D., “Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K”, Journal of Applied Physics, vol. 74, no. 5, p. 3293, 1993.
args:
- temp (scalar): the temperature
return:
- ni (scalar): the intrinsic concentration in silicon
def mobility_impurity(mu_0, carrier='n', Ni=1000000000000000.0, temp=300, dopant='phosphorus')
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def mobility_impurity(mu_0,carrier="n",Ni=1e15,temp=300, dopant="phosphorus"): """ Function to calculate the silicon mobility according to Masetti relation (1983) args: \n\t- carrier (string): "n" for electrons, "p" for holes \n\t- temp (scalar): the temperature \n\t- Ni (scalar): the impurity cencentration in cm-3 \n\t- dopant (string): the type of n-type dopant. "phosphorus" or "arsenic" return: \n\t- mu_LI (scalar): the electron or hole mobility with the impurity scattering taken into account """ # Values are taken from Masetti et al. (1983) if dopant=="phosphorus": param_300_n={"mu_min":68.5,"Cref":9.20e16,"alpha":0.711} correction_n={"mu_min":56.1,"Cref":3.41e20,"alpha":1.98} # mu_0=1414 elif dopant=="arsenic": param_300_n={"mu_min":52.2,"Cref":9.68e16,"alpha":0.680} correction_n={"mu_min":43.4,"Cref":3.43e20,"alpha":2.00} # mu_0=1417 param_300_p={"mu_min":44.9,"Cref":22.3e16,"alpha":0.72} correction_p={"mu_min":29.0,"Cref":6.1e20,"alpha":2.0} expon_temp={"mu_min":-0.45,"Cref":3.2,"alpha":0.065} if carrier=="n": param_300=param_300_n correction=correction_n["mu_min"]/(1+(correction_n["Cref"]/Ni)**correction_n["alpha"]) else: param_300=param_300_p correction=correction_p["mu_min"]/(1+(correction_p["Cref"]/Ni)**correction_p["alpha"]) # mu_0=470.5 mu_min=param_300["mu_min"]*(temp/300)**expon_temp["mu_min"] Cref=param_300["Cref"]*(temp/300)**expon_temp["Cref"] alpha=param_300["alpha"]*(temp/300)**expon_temp["alpha"] mu_LI=mu_min+(mu_0-mu_min) / ( 1 + ( Ni / Cref )**alpha )-correction return mu_LI
Function to calculate the silicon mobility according to Masetti relation (1983)
args:
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carrier (string): "n" for electrons, "p" for holes
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temp (scalar): the temperature
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Ni (scalar): the impurity cencentration in cm-3
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dopant (string): the type of n-type dopant. "phosphorus" or "arsenic"
return:
- mu_LI (scalar): the electron or hole mobility with the impurity scattering taken into account
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def piezo_ratio_temperature(temp, carrier='n')
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def piezo_ratio_temperature(temp,carrier="n"): """ Function to calculate the correcting ratio due to temperature variations for the piezoresistive coefficients. The data are taken from Kanda (1982) between 200 K and 400K. The correction is refered to the 300K coefficients. The new piezoresistive coefficients can be calculated by piezo_coefficient(temp) = ratio * piezo_coefficient(300K) args: \n\t- temp (scalar or sequence): the temperatures for which the correting ratio has to be calculated \n\t- carrier (string): "n" for electrons, "p" for holes return: \n\t- a scalar or sequence with the same dimension as temp with the correcting ratio """ temp_kanda1982=np.linspace(125, -75,9)+273 dpi_kanda1982_n=np.array([0.7547318611987381,0.8067823343848579,0.8611987381703468,0.9298107255520504,1.0007886435331228,1.0977917981072554,1.2113564668769716,1.3438485804416402,1.5165615141955835]) dpi_kanda1982_p=np.array([0.7523342983957861,0.8037360206464299,0.8598127702627387,0.922894558591104,0.995324258126102,1.0934548187864221,1.205601887444947,1.3411219494071012,1.5093457676819353]) fn=interp.interp1d(temp_kanda1982,dpi_kanda1982_n,kind="linear",fill_value="extrapolate" ) fp=interp.interp1d(temp_kanda1982,dpi_kanda1982_p,kind="linear",fill_value="extrapolate" ) if carrier=="n": return fn(temp) elif carrier =="p": return fp(temp) else: return 0
Function to calculate the correcting ratio due to temperature variations for the piezoresistive coefficients. The data are taken from Kanda (1982) between 200 K and 400K. The correction is refered to the 300K coefficients. The new piezoresistive coefficients can be calculated by piezo_coefficient(temp) = ratio * piezo_coefficient(300K)
args:
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temp (scalar or sequence): the temperatures for which the correting ratio has to be calculated
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carrier (string): "n" for electrons, "p" for holes
return:
- a scalar or sequence with the same dimension as temp with the correcting ratio
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def piezoresistivity_strain(strain_tensor, pi11, pi12, pi44)
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def piezoresistivity_strain(strain_tensor, pi11, pi12, pi44): """ Function to calculate the relative change due to stress in silicon args: \n\t- stress_tensor (numpy array): the stress tensor for which the stress should be calculated. The voigt notation should be used with a 1 x 6 vector but the function can handle 3 x 3 matrix but only take the upper half in this case. \n\t- pi11, pi12 and pi44 (scalar): piezoresistive coefficients used to calculate the variations in the relative resistivity. Values from Smith (1954) are pi11 = -1022 TPa-1, pi12 = 534 TPa-1 and pi44 = -136 TPa-1 for the electrons, and pi11 = 66 TPa-1, pi12 = -11 TPa-1 and pi44 = 1381 TPa-1 for the holes. return: \n\t- an 1 x 6 tensor using the Voigt notation with the relative variation of the resistivity. """ piezo_tensor=np.array([[pi11,pi12,pi12,0,0,0], [pi12,pi11,pi12,0,0,0], [pi12,pi12,pi11,0,0,0], [0,0,0,pi44,0,0], [0,0,0,0,pi44,0], [0,0,0,0,0,pi44]]) stress_tensor= mec.stress_from_strain(strain_tensor) return piezo_tensor @ stress_tensor
Function to calculate the relative change due to stress in silicon
args:
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stress_tensor (numpy array): the stress tensor for which the stress should be calculated. The voigt notation should be used with a 1 x 6 vector but the function can handle 3 x 3 matrix but only take the upper half in this case.
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pi11, pi12 and pi44 (scalar): piezoresistive coefficients used to calculate the variations in the relative resistivity. Values from Smith (1954) are pi11 = -1022 TPa-1, pi12 = 534 TPa-1 and pi44 = -136 TPa-1 for the electrons, and pi11 = 66 TPa-1, pi12 = -11 TPa-1 and pi44 = 1381 TPa-1 for the holes.
return:
- an 1 x 6 tensor using the Voigt notation with the relative variation of the resistivity.
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def piezoresistivity_stress(stress_tensor, pi11, pi12, pi44)
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def piezoresistivity_stress(stress_tensor, pi11, pi12, pi44): """ Function to calculate the relative change due to stress in silicon args: \n\t- stress_tensor (numpy array): the stress tensor for which the stress should be calculated. The voigt notation should be used with a 1 x 6 vector but the function can handle 3 x 3 matrix but only take the upper half in this case. \n\t- pi11, pi12 and pi44 (scalar): piezoresistive coefficients used to calculate the variations in the relative resistivity. Values from Smith (1954) are pi11 = -1022 TPa-1, pi12 = 534 TPa-1 and pi44 = -136 TPa-1 for the electrons, and pi11 = 66 TPa-1, pi12 = -11 TPa-1 and pi44 = 1381 TPa-1 for the holes. return: \n\t- an 1 x 6 tensor using the Voigt notation with the relative variation of the resistivity. """ stress_voigt=np.zeros((6,1)) stress_shape=np.shape(stress_tensor) if len(stress_shape)==2: if stress_shape[0]==3 and stress_shape[1]==3: stress_voigt[0]=stress_tensor[0,0] stress_voigt[1]=stress_tensor[1,1] stress_voigt[2]=stress_tensor[2,2] stress_voigt[3]=stress_tensor[1,2] stress_voigt[4]=stress_tensor[0,2] stress_voigt[5]=stress_tensor[0,1] if stress_shape[0]==1 and stress_shape[1]==6: stress_voigt=stress_tensor else: stress_voigt=np.array([stress_tensor]) piezo_tensor=np.array([[pi11,pi12,pi12,0,0,0], [pi12,pi11,pi12,0,0,0], [pi12,pi12,pi11,0,0,0], [0,0,0,pi44,0,0], [0,0,0,0,pi44,0], [0,0,0,0,0,pi44]]) return piezo_tensor @ stress_voigt
Function to calculate the relative change due to stress in silicon
args:
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stress_tensor (numpy array): the stress tensor for which the stress should be calculated. The voigt notation should be used with a 1 x 6 vector but the function can handle 3 x 3 matrix but only take the upper half in this case.
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pi11, pi12 and pi44 (scalar): piezoresistive coefficients used to calculate the variations in the relative resistivity. Values from Smith (1954) are pi11 = -1022 TPa-1, pi12 = 534 TPa-1 and pi44 = -136 TPa-1 for the electrons, and pi11 = 66 TPa-1, pi12 = -11 TPa-1 and pi44 = 1381 TPa-1 for the holes.
return:
- an 1 x 6 tensor using the Voigt notation with the relative variation of the resistivity.
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def tau_srh(Ni, tau_0=5e-05, Nc=5e+16, A=1, B=1, C=0, E=0)
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def tau_srh(Ni, tau_0=5e-5, Nc=5e16, A=1, B=1, C=0, E=0): """ Function to calculate the SRH lifetime of silicon. The default parameters, similar for electron and hole, are those from D'Avanzo, D. C., Vanzi, M., Dutton, R. W.: One-Dimensional Semiconductor Device Analysis (SEDAN). Report G-201-5, Stanford University, 1979. args: \n\t- Ni (scalar): the impurity density in the material \n\t- tau_0 (scalar): intial value for the lifetime \n\t- Nc (scalar): the critical impurity level \n\t- A, B, C and D (scalar): the coefficient for the model return: \n\t- the SRH lifetime in silicon """ return tau_0/(A+B*(Ni/Nc)+C*(Ni/Nc)**E)
Function to calculate the SRH lifetime of silicon. The default parameters, similar for electron and hole, are those from D'Avanzo, D. C., Vanzi, M., Dutton, R. W.: One-Dimensional Semiconductor Device Analysis (SEDAN). Report G-201-5, Stanford University, 1979.
args:
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Ni (scalar): the impurity density in the material
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tau_0 (scalar): intial value for the lifetime
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Nc (scalar): the critical impurity level
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A, B, C and D (scalar): the coefficient for the model
return:
- the SRH lifetime in silicon
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def tau_trap(tau_n, tau_p, NA, ND, Etrap=0.56, Eg=1.12, temp=300)
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def tau_trap(tau_n, tau_p, NA, ND, Etrap=0.56,Eg=1.12, temp=300): """ Function to calculate the lifetime of silicon due to a trap. args: \n\t- tau_n and tau_p (scalar): the life time of the electron and hole due to the trap density. The lifetime can be calculated by tau_n = 1 / (sigma_n * v_th * Nt ) where sigma_n is the capture cross section, vth is the thermal velocity and Nt is the trap density. Typical values for the thermal velocities are 2.3e7 and 1.65e7 cm/s for the electrons and holes, respectively. Typical value for the capture cross section is 1e-15 cm² for a neutral defect. Typical value for the trap density is 1e12 cm-3 for a neutral defect. \n\t- NA and ND (scalar): the acceptor and donor density of the pn junction \n\t- Etrap (scalar): the trap level referred to the maximum of the valence band \n\t- Eg (scalar): the bandgap of the material \n\t- temp (scalar): the temperature return: \n\t- the trap lifetime """ kB = 1.38e-23 # J/K q = 1.602e-19 # C nieff=intrinsic_concentration(temp) n_0 = nieff**2 / NA p_0 = nieff**2 / ND n1 = nieff * np.exp(- q * (Eg - Etrap) / (kB*temp)) p1 = nieff * np.exp(- q * Etrap / (kB*temp)) return (tau_p * (n_0 + n1) + tau_n * (p_0 + p1)) / (p_0 + n_0)
Function to calculate the lifetime of silicon due to a trap.
args:
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tau_n and tau_p (scalar): the life time of the electron and hole due to the trap density. The lifetime can be calculated by tau_n = 1 / (sigma_n * v_th * Nt ) where sigma_n is the capture cross section, vth is the thermal velocity and Nt is the trap density. Typical values for the thermal velocities are 2.3e7 and 1.65e7 cm/s for the electrons and holes, respectively. Typical value for the capture cross section is 1e-15 cm² for a neutral defect. Typical value for the trap density is 1e12 cm-3 for a neutral defect.
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NA and ND (scalar): the acceptor and donor density of the pn junction
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Etrap (scalar): the trap level referred to the maximum of the valence band
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Eg (scalar): the bandgap of the material
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temp (scalar): the temperature
return:
- the trap lifetime
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